K-2 - Session programs - SCEJ 82nd Annual Meeting (Tokyo, 2017)

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`SCEJ 82nd Annual Meeting (Tokyo, 2017)`

Last modified: 2017-02-20 10:00:00

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Session programs : K-2

The abstracts can be viewed by clicking the Paper IDs.
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K-2 [International Symposium]
Reaction Engineering of CVD: iCVD and Emerging Processes, Applications, and Fundamental Understanding

Organizer:

Machida Hideaki (Gas-Phase Growth LTD.), Momose Takeshi (Univ. Tokyo), Noda Suguru (Waseda Univ.)

We invite Prof. Sung Gap Im at KAIST, Korea, the winner of the SCEJ Award for Outstanding Asian Researcher and Engineer 2016.
He will deliver a lecture on his iCVD (initiated chemical vapor deposition) method for low temperature deposition of uniform, ultrathin polymer films, and their electronics and biomedical applications. We will also discuss the analysis of CVD processes based on reaction engineering, rational design and development of new processes based on understanding of CVD mechanisms, and applications to advanced materials and devices.

Hall E, Day 2

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Hall E(Kyoshitsu-to 4F 404), Day 2(Mar. 7)
(9:00–12:00) (Chair: Noda Suguru)
9:00– 9:40	E201	[Invited lecture] Analysis and Design of CVD/ALD processes Based on Chemical Reaction Engineering (U. Tokyo) (Ful)Shimogaki Yukihiro	Chemical Reaction Engineering CVD Process Design	K-2	838
9:40– 10:20	E203	[Invited lecture] Cat-CVD and Its Development to Various Fields (JAIST) Matsumura Hideki	Thin Film Technology Cat-CVD Cat-doping	K-2	82
10:20– 10:40	E205	[Requested talk] Reaction Mechanism and Growth-rate Distribution in Metal-Organic Vapor-Phase Epitaxy of GaN (U. Tokyo) *(Ful)Sugiyama Masakazu, (Ful)Momose Takeshi, (Politecnico Di Milano) Ravasio Stefano, Cavallotti Carlo, (U. Tokyo) (Ful)Shimogaki Yukihiro	GaN MOVPE reaction mechanism	K-2	324
10:40– 11:00	E206	[Requested talk] Plasma decomposition of hexamethyldisiloxane, oxygen, and ammonia for coating a polymer substrate with silica-based film (Kyoto U.) (Ful)Kawase M.	Plasma CVD silica-based gas-barrier film HMDSO	K-2	740
11:00– 11:20	E207	[Requested talk] B-atom release from metal wires boronized by non-explosive boron compounds (Shizuoka U.) Umemoto Hironobu	chemical vapor deposition hot wire boron atoms	K-2	17
11:20– 11:40	E208	[Requested talk] Surface reaction design for silicon epitaxial growth based on the reactor simulation (Yokohama Nat. U.) *(Ful)Habuka Hitoshi, Watanabe Toru, Yamada Ayami, Saito Ayumi, Sakurai Ayumi	silicon epitaxial growth rate trichlorosilane silicon hydride	K-2	14
11:40– 12:00	E209	[Requested talk] CVD and ALD precursor candidates for transition metal film deposition (Gas-Phase Growth) Machida Hideaki	Transition metal film Amidinate precursor Ethyl derivatives	K-2	157
(13:00–15:20) (Chair: Momose Takeshi)
13:00– 13:40	E213	[The SCEJ Award for Outstanding Asian Researcher and Engineer] Vapor-phase deposition of functional polymer films and their applications (KAIST) Im Sung Gap	initiated chemical vapor deposition functional polymer films electronic, separation, and biomedical applications	K-2	26
13:40– 14:20	E215	[Invited lecture] Application of Cat-CVD technology to crystalline silicon solar cells (JAIST) *Ohdaira Keisuke, Trinh Cham Thi, Oikawa Takafumi, Seto Junichi, Koyama Koichi, Matsumura Hideki	catalytic chemical vapor deposition crystalline Si solar cell passivation	K-2	85
14:20– 14:40	E217	[Requested talk] Synthesis of carbon nitride using microwave plasma CVD (Gifu U.) *Tanaka Ippei, (Chiba Inst. Tech.) Sakamoto Yukihiro	plasma CVD carbon nitride	K-2	477
14:40– 15:00	E218	[Requested talk] PEALD-TiO₂ films synthesized via CCRF discharges (Tokyo Electron Yamanashi) Iwashita Shinya	TiO2 PEALD deposition	K-2	217
15:00– 15:20	E219	[Requested talk] Surface coating of carbon nanotubes by aerosol process with plasma enhanced chemical vapor deposition (Hiroshima U.) *(Ful)Shimada Manabu, (Ful)Kubo Masaru, (Hiroshima U./ITS Surabaya) (Ful)Kusdianto K.	PECVD carbon nanotube dry coating process	K-2	396
(15:40–17:20) (Chair: Machida Hideaki)
15:40– 16:00	E221	[Requested talk] Novel catalytic property of structured catalyst prepared by wet-type chemical deposition (Shizuoka U.) (Ful)Fukuhara Choji	Electroless plating Structured catalyst Hydrogen production	K-2	198
16:00– 16:20	E222	[Requested talk] Thin film deposition in supercritical fluids - impact of solvent capability on deposition characteristics (U. Yamanashi) (Ful)Kondoh Eiichi	supercritical fluids solvent capability thin film deposition	K-2	184
16:20– 16:40	E223	[Requested talk] Hot-filament CVD growth of low-resistivity diamond for power device applications (AIST) Ohmagari Shinya	hot-filament CVD diamond low-resistivity	K-2	219
16:40– 17:00	E224	[Requested talk] Effects of N₂O Addition during the Growth of ZnO Films by Chemical Vapor Deposition Using a Catalytic Reaction (Nagaoka U. Tech.) Tajima Ryouichi, Watanabe Koudai, Ono Shotarou, Kato Takahiro, *Yasui Kanji	chemical vapor deposition catalytic reactions ZnO films	K-2	112
17:00– 17:20	E225	[Requested talk] Engineering Carbon Nanotube Synthesis: Catalyst Screening, Identification of Reactive Species, and Rational Reactor Design (Waseda U.) (Ful)Noda Suguru	carbon nanotubes chemical vapor deposition rational design and development	K-2	19

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SCEJ 82nd Annual Meeting (Tokyo, 2017)

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SCEJ 82nd Annual Meeting (Tokyo, 2017)

Session programs : K-2

K-2 [International Symposium] Reaction Engineering of CVD: iCVD and Emerging Processes, Applications, and Fundamental Understanding

`SCEJ 82nd Annual Meeting (Tokyo, 2017)`

K-2 [International Symposium]
Reaction Engineering of CVD: iCVD and Emerging Processes, Applications, and Fundamental Understanding