
SCEJ 84th Annual Meeting (Tokyo, 2019)
Last modified: 2019-03-12 11:30:00
Program search result : Fave Alain : 1 program
The preprints(abstracts) can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.
(The ID/PW have also been sent to the Earlybird registers and invited persons by e-mail.)
The programs of
HC-13,
HC-17,
K-1 were updated.
Authors field exact matches “Fave Alain”; 1 program is found.
The search results are sorted by the start time.
Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
Day 3 14:20– 14:40 | F317 | Wafer level thin monocrystallyne Si for solar cell by rapid vapor deposition on nano-level smoothed support
(Tokyo Tech) *(Reg)Hasegawa Kei, (Stu)Shibahara Ryotaro, Matsuura Akira, Takazawa Chiaki, (INSA de Lyon) Fave Alain, Fourmond Erwann, (Waseda U.) (Reg)Noda Suguru, (Tokyo Tech) (Reg)Ihara Manabu | solar cell epitaxial growth monocrystallyne silicon
| 9-e | 1220 |
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SCEJ 84th Annual Meeting (Tokyo, 2019)
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