SCEJ

$B2=3X9)3X2q(B $BBh(B40$B2s=)5(Bg2q(B

$B9V1i%W%m%0%i%`!J2q>l!&F|DxJL!K(B

T$B2q>l(B $BBh(B3$BF|(B

$B:G=*99?7F|;~!'(B2008-09-20 14:26:11
$B9V1i(B
$B;~9o(B		$B9V1i(B
$BHV9f(B		$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$BJ,N`(B
$BHV9f(B		$B$BHV9f(B
$B%7%s%]%8%&%`(B $B!c#C#V#D!&%I%i%$%W%m%;%9%7%s%]%8%&%`!!!]%J%N!&%^%$%/%m9=B$7A@.%W%m%;%9$NH?1~9)3X!]!d(B
(9:00$B!A(B10:00)$B!!(B($B:BD9(B $B1)?<(B $BEy(B)
9:00$B!A(B 9:20T301InGaAsP$B7O(BMOVPE$B$K$*$1$kH?1~O'7A>u0MB8@-(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B54DM(B $BN4M4(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		MOVPE
Simulation
S-38860
9:20$B!A(B 9:40T302InGaAsP$B7O(BMOVPE$B$K$*$1$kI=LL5[CeAXB.EY2aDx$N(Bin situ$B4Q;!$H%b%G%k2=(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B		MOVPE
InGaAsP
surface adsorption layer
S-38162
9:40$B!A(B 10:00T303$B8:05(BCVD$BK!$K$h$k(BSiGe$B%(%T%?%-%7%c%k@.D9$N2r@O%b%G%k(B
($BM}8&(B) $B!{(B($BIt(B)$B:#0f(B $B@5?M(B$B!&(B$B5\B<(B $B2B;y(B$B!&(B$B?@ED(B $B5.M5(B$B!&(B$BB		SiGe
RP-CVD
CHEMKIN
S-38384
(10:00$B!A(B11:00)$B!!(B($B:BD9(B $B6LCV(B $BD>
10:00$B!A(B 10:20T304$BM-5!(BN$B86NA$K$h$k(BInN$BGvKl$N(BMOVPE$B@.D9(B
($BElBg?7NN0h(B) $B!{(B($BIt(B)Thieu Q. T.$B!&(B($BIt(B)$B4X(B $BM55*(B$B!&(B($BIt(B)$B7&C+(B $BLP9,(B$B!&(B($BIt(B)$BJR;3(B $BN5Fs(B$B!&(B($BIt(B)$BHxFi(B $B8&B@O:(B		MOVPE
InN
epitaxy
S-38183
10:20$B!A(B 10:40T305$B%Q%k%9Ne5/BO@QK!$K$h$kCb2=J*GvKl@.D9$N%a%+%K%:%`(B
($BElBg@88&(B) $B!{(B($BIt(B)$B0f>e(B $BLP(B$B!&(B($B@5(B)$B2,K\(B $B9@0lO:(B$B!&(B($B@5(B)$BB@ED(B $B$B!&(B($BIt(B)$BF#2,(B $BMN(B$B!&(B($BD;		Pulsed Excitation Deposition
epitaxial growth
nitride
S-3894
10:40$B!A(B 11:00T306$BA*Br@.D9(BInGaN$BNL;R0f8M$K$*$1$k5$Aj3H;6$N8z2L(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BIYED(B $BM45.(B$B!&(B($B3X(B)$B1vED(B $BNQLi(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		InGaN
Selective Area Growth
MOVPE
S-38888
(11:00$B!A(B12:00)$B!!(B($B:BD9(B $B?y;3(B $B@5OB(B)
11:00$B!A(B 11:20T307MOVPE$BA*Br@.D9$K$*$1$k(BInN$B@.D9B.EYJ,I[$N2r@O(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B1vED(B $BNQLi(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		MOVPE
selective area growth
InN
S-38977
11:20$B!A(B 12:00T308[$BE8K>9V1i(B]$BM-5!6bB05$AjA*Br@.D9K!$K$h$kH>F3BN%J%N%o%$%d$N@.D9$H$=$N@.D95!9=(B
($BKLBgNL;R=8@Q%;%s%?!<(B) $B!{(B($BIt(B)$BHfN14V(B $B7rG7(B$B!&(B($BIt(B)$B86(B $B??FsO:(B$B!&(B($BIt(B)$BK\5W(B $B=g0l(B$B!&(B($BIt(B)$BJ!0f(B $B9';V(B		MOVPE
nanowaire
selective growth
S-38413
(13:00$B!A(B14:00)$B!!(B($B:BD9(B $BDT(B $B2B;R(B)
13:00$B!A(B 13:20T313MOVPE$B$K$*$1$k;@2=%"%k%_%K%&%`$K$h$k(BGaAs(001)$BLL$N(Bin situ $B%Q%C%7%Y!<%7%g%s(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B;{ED(B $BM:5*(B$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B$BCfLn(B $B5A><(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B		in situ passivation
GaAs
MOVPE
S-38837
13:20$B!A(B 13:40T314$BD6NW3&Fs;@2=C:AG$rMQ$$$?;@2=%A%?%s$N:n@=>r7o(B
($BEl3$Bg1!9)(B) $B!{(B($B3X(B)$B1|B<(B $BM%L4(B$B!&(B($BEl3$Bg9)(B) $B9b66(B $B7rB@(B$B!&(B($BEl3$Bg1!9)(B) ($B@5(B)$B=);3(B $BBY?-(B		supercritical fluid deposition
Titanium oxide
S-38908
13:40$B!A(B 14:00T315$B%^%/%m%-%c%S%F%#K!$rMQ$$$?(BCu-SCFD$B$N2r@O$HNL;:BP1~AuCV$N35G0@_7W(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BI4@%(B $B7r(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B		supercritical
copper
deposition
S-38847
(14:00$B!A(B15:00)$B!!(B($B:BD9(B $B=);3(B $BBY?-(B)
14:00$B!A(B 14:20T316ULSI$B6KGv(BCu$BKl$N(BSCFD$B@=Kl>r7o2<$G$N6E=85sF0$H@)8f(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B@1Ln(B $BOBLi(B$B!&(B($B3X(B)$BI4@%(B $B7r(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B		supercritical carbon dioxide
ultra-thin Cu film
S-38909
14:20$B!A(B 14:40T317$BD6NW3&N.BNCf$G$N(BZnO$BGvKl$NBO@Q(B
($B;3M|Bg1!(B) $B!{(B($B@5(B)$B6aF#(B $B1Q0l(B$B!&(B($B;3M|Bg9)(B) $B:4!9LZ(B $B7rFs(B$B!&(B($B;3M|Bg1!(B) $BFiC+(B $BD*0l(B		$BD6NW3&N.BN(B
ZnO
S-381021
14:40$B!A(B 15:00T318$BEE;R%G%P%$%9MQ%3%P%k%H%7%j%5%$%IGvKl$N7k>=@.D9$NM}2r$H@)8f(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BDT(B $BM3$B!&(B($B@5(B)$BDT(B $B2B;R(B$B!&(B($B@5(B)$BLnED(B $BM%(B$B!&(B($B@5(B)$B;38}(B $BM34tIW(B		cobalt disilicide
crystal growth
sputter deposition
S-3863
(15:00$B!A(B16:00)$B!!(B($B:BD9(B $B6aF#(B $B1Q0l(B)
15:00$B!A(B 15:20T319$B%>%k!>%2%kK!$K$h$k(BCaBi4Ti4O15$B6/M6EEBN$N@=Kl(B
($B:eI\Bg2=9)(B) $B!{(B($B3X(B)$BW"ED(B $BM40lO:(B$B!&(B$BBgLx(B $BKcN$;R(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B		ferroelectric random access memory
sol-gel
curie temperature
S-38139
15:20$B!A(B 15:40T320$BG.(BCVD$BK!$rMQ$$$?%A%?%s;@%P%j%&%`6/M6EEBNGvKl$N:n@=$H$=$NJ*@-$K4X$9$k8!F$(B
($BEl3$Bg1!9)(B) $B!{(B($B3X(B)$B4X:,(B $BE0L@(B$B!&(B($B3X(B)$B@nEg(B $BCN;j(B$B!&(B$B:4F#(B $B98(B$B!&(B$B1|B<(B $BM%L4(B$B!&(B$B@u@n(B $BBs(B$B!&(B($B@5(B)$B=);3(B $BBY?-(B		Barium Titanate
Ferroelectric substance
CVD
S-38430
15:40$B!A(B 16:00T321$B%Q%i%8%&%`GvKl$r46CN:`$H$9$k?eAG%;%s%5!<(B
($B1'ET5\Bg1!9)(B) $B!{(B($B3X(B)$B9bLx(B $BCR(B$B!&(B($B@5(B)$B:4F#(B $B9d;K(B$B!&(B($B@5(B)$B0KF#(B $BD>		hydrogen
sensor
palladium
S-38575
(16:00$B!A(B17:00)$B!!(B($B:BD9(B $B:4F#(B $B9d;K(B)
16:00$B!A(B 16:20T322PLD$BK!$K$h$k(BBi-Te$B7OG.EEAG;RGvKl$N:n@=$HI>2A(B -3-
($B:eI\Bg9)(B) $B!{(B($B3X(B)$BB<>e(B $BH~:;(B$B!&(B(MEITEC CORPORATION) ($B@5(B)$B:4F#(B $BL@I'(B$B!&(B($BEl3$M}2=(B) ($B@5(B)$BKY;3(B $BCRG7(B$B!&(B($B:eI\Bg9)(B) ($B@5(B)$BDE5W0f(B $BLP		PLD
Bi-Te
Thermoelectric
S-38825
16:20$B!A(B 16:40T323$B0!1t4T85K!$rMQ$$$?%7%j%3%s@8@.$K$*$1$kH?1~2r@O(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B>e_7(B $BL@1{(B$B!&(B($B@5(B)$B0p_7(B $B?8(B$B!&(B$B;09%(B $BL@(B$B!&(B($B@5(B)$B;38}(B $BM34tIW(B		silicon powder
zinc reduction
reaction analysis
S-38279
16:40$B!A(B 17:00T324$BGr6b%J%NN3;R$NC4;}$H8w?(G^3h@-(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B9g@n(B $B1QCK(B$B!&(B($B@5(B)$BDE5W0f(B $BLP$B!&(B($B5~Bg1!9)(B) ($B@5(B)$BD9Nf(B $B?.Je(B$B!&(B($B3X(B)$BEDCf(B $BNI7I(B		pulsed laser deposition
Pt nanoparticle
photocatalyst
S-38851
(17:00$B!A(B17:40)$B!!(B($B:BD9(B $BDE5W0f(B $BLP
17:00$B!A(B 17:20T325$B%^%$%/%m%W%i%:%^$K$h$k@D?'H/8w%7%j%3%s%J%NN3;R$N9g@.$HI=LL=$>~(B
($BEl9)Bg(B) $B!{(B($B@5(B)$BLn:j(B $BCRMN(B$B!&(B$BCfL6ED(B $B?r;K(B$B!&(B$B:4@n(B $B@55-(B$B!&(B($B@5(B)$B2,:j(B $B7r(B		Silicon nanocrystal
microplasma
quantum confinement
S-3899
17:20$B!A(B 17:40T326Plasma-Assisted Formation of Silicon Nanoparticles Using SiBr4
(Graduate School of Eng. the U. Tokyo) $B!{(B($B3X(B)Shen Peng$B!&(B($B3X(B)Uesawa Norihisa$B!&(B($B@5(B)Inasawa Susumu$B!&(B($B@5(B)Yamaguchi Yukio		Plasma-CVD
Silicon Nanoparticle
Silicon Tetrabromide
S-38294
$B9V1i%W%m%0%i%`(B
$B2=3X9)3X2q(B $BBh(B40$B2s=)5(Bg2q(B
(C) 2008 ($B
Most recent update: 2008-09-20 14:26:11
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