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| $B!{1)?fLw!J:eI\Bg!K!$?y;3@5OB!JEl5~Bg!K(B |
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| $B$3$NJ,N`$G$h$/;H$o$l(B $B$F$$$k%-!<%o!<%I(B | $B%-!<%o!<%I(B | $B | |
|---|---|---|---|
| MOVPE | 7$B7o(B | | |
| Single-walled carbon nanotubes | 4$B7o(B | | |
| Liquid pulse injection technique | 2$B7o(B | | |
| InN | 2$B7o(B | | |
| chemical vapor deposition | 2$B7o(B | | |
| Carbon nanotube | 2$B7o(B | | |
| selective area growth | 2$B7o(B | | |
| sputter deposition | 2$B7o(B | | |
| Silicon | 2$B7o(B | | |
| carbon nanofibers | 2$B7o(B | | |
| CVD | 2$B7o(B | | |
| surface modification | 1$B7o(B | | |
| $B | $B9V1iBjL\!?H/I=| $B%-!<%o!<%I(B | $B | |
|---|---|---|---|
| 14 | $B;0%U%C2=1vAG%,%9$K$h$k(B4H-SiC$B%(%C%A%s%0B.EY2r@O(B | SiC ClF3 Etching | 4/15 09:38:59 |
| 63 | $BEE;R%G%P%$%9MQ%3%P%k%H%7%j%5%$%IGvKl$N7k>=@.D9$NM}2r$H@)8f(B | cobalt disilicide crystal growth sputter deposition | 4/23 16:29:58 |
| 64 | $B%9%Q%C%?K!$K$h$k(BFePt$B<'@-BN%J%N%m%C%I$N9=B$!&<'5$FC@-@)8f(B | magnetic nanorod local epitaxy sputter deposition | 4/23 16:43:47 |
| 94 | $B%Q%k%9Ne5/BO@QK!$K$h$kCb2=J*GvKl@.D9$N%a%+%K%:%`(B | Pulsed Excitation Deposition epitaxial growth nitride | 4/24 15:20:27 |
| 99 | $B%^%$%/%m%W%i%:%^$K$h$k@D?'H/8w%7%j%3%s%J%NN3;R$N9g@.$HI=LL=$>~(B | Silicon nanocrystal microplasma quantum confinement | 4/24 16:51:46 |
| 112 | $B<+8JAH?%2=$rMxMQ$7$?C1AX(BCNT$B%U%#!<%k%I%(%_%C%?$N9bL)EY=8@Q(B | field emitter array single-walled carbon nanotubes self-organization | 4/24 19:51:15 |
| 119 | $BEE;R%(%_%C%?1~MQ$rL\E*$H$7$?C1AX%+!<%\%s%J%N%A%e!<%V$N7ABV@)8f$H%3%s%S%J%H%j%"%kFC@-I>2A(B | Single-walled carbon nanotubes Field emission Combinatorial evaluation | 4/25 09:34:34 |
| 139 | $B%>%k!>%2%kK!$K$h$k(BCaBi4Ti4O15$B6/M6EEBN$N@=Kl(B | ferroelectric random access memory sol-gel curie temperature | 4/25 11:12:01 |
| 162 | InGaAsP$B7O(BMOVPE$B$K$*$1$kI=LL5[CeAXB.EY2aDx$N(Bin situ$B4Q;!$H%b%G%k2=(B | MOVPE InGaAsP surface adsorption layer | 4/25 14:15:47 |
| 183 | $BM-5!(BN$B86NA$K$h$k(BInN$BGvKl$N(BMOVPE$B@.D9(B | MOVPE InN epitaxy | 4/25 16:04:59 |
| 194 | $B7A>u%7%_%e%l!<%7%g%s$K$h$k(BSi$B?<7!$j(BRIE$B$N%b%G%j%s%0(B | topography simulation silicon RIE | 4/25 17:27:54 |
| 277 | $B?(G^(BCVD$BK!$K$*$1$kC1AX%+!<%\%s%J%N%A%e!<%V?bD>G[8~@.D9$NA06nBN(B | single-walled carbon nanotubes chemical vapor deposition gas phase reaction | 4/28 13:26:23 |
| 279 | $B0!1t4T85K!$rMQ$$$?%7%j%3%s@8@.$K$*$1$kH?1~2r@O(B | silicon powder zinc reduction reaction analysis | 4/28 13:30:31 |
| 294 | Plasma-Assisted Formation of Silicon Nanoparticles Using SiBr4 (Graduate School of Eng. the U. Tokyo) $B!{(B($B3X(B)Shen Peng$B!&(B | Plasma-CVD Silicon Nanoparticle Silicon Tetrabromide | 4/28 14:25:55 |
| 311 | $B7V8w%W%m!<%V$rMQ$$$?%^%$%/%mGH$K$h$kH?1~B%?J5!9=$N2rL@(B | microwave fluorescence | 4/28 15:39:01 |
| 330 | $B%1%$AG=$>~%+!<%\%s%J%N%U%!%$%P!<$N@=B$(B | carbon nanofibers Liquid pulse injection technique Si coating | 4/28 16:39:46 |
| 384 | $B8:05(BCVD$BK!$K$h$k(BSiGe$B%(%T%?%-%7%c%k@.D9$N2r@O%b%G%k(B | SiGe RP-CVD CHEMKIN | 4/28 19:40:20 |
| 387 | $B%+!<%\%s%J%N%A%e!<%V9g@.$N$?$a$N5!G=J,C4?(G^$N3+H/(B | carbon nanotube catalyst chemical vapor deposition | 4/28 19:54:21 |
| 413 | [$BE8K>9V1i(B]$BM-5!6bB05$AjA*Br@.D9K!$K$h$kH>F3BN%J%N%o%$%d$N@.D9$H$=$N@.D95!9=(B | MOVPE nanowaire selective growth | 4/29 00:02:38 |
| 430 | $BG.(BCVD$BK!$rMQ$$$?%A%?%s;@%P%j%&%`6/M6EEBNGvKl$N:n@=$H$=$NJ*@-$K4X$9$k8!F$(B | Barium Titanate Ferroelectric substance CVD | 4/29 14:08:50 |
| 460 | $B%+!<%\%s%J%N%A%e!<%V!&%S%"G[@~$K8~$1$?GvKl?(G^$N3+H/(B | Carbon nanotube | 4/29 19:31:46 |
| 470 | In-situ$B@V30J,8wJ,@O$rMQ$$$?G.J,2rC:AG(BCVD$BH?1~2aDx$N?dDj(B | pyrocarbon CVD infrared absorption | 4/29 23:15:46 |
| 542 | $B0[J}@-!&EyJ}@-$rAH$_9g$o$;$?%7%j%3%s?<7!$j%(%C%A%s%0$N7A>u$X$N%"%9%Z%/%HHf$N8z2L(B | Deep RIE Silicon Topography | 4/30 11:44:33 |
| 575 | $B%Q%i%8%&%`GvKl$r46CN:`$H$9$k?eAG%;%s%5!<(B | hydrogen sensor palladium | 4/30 13:06:15 |
| 576 | $BI=LL=$>~%+!<%\%s%J%N%U%!%$%P!<$N@=B$(B | carbon nanofibers Liquid pulse injection technique surface modification | 4/30 13:07:03 |
| 596 | $B4pHD>e$NC1AX%+!<%\%s%J%N%A%e!<%V$N9bB.@.D92aDx$K$*$1$kD>7BJQ2=(B | Single-walled carbon nanotubes catalytic chemical vapor deposition growth mechanism | 4/30 13:37:02 |
| 681 | $B%^%$%/%mG.%W%i%:%^$rMQ$$$?(BSiO2$B5Z$S(BTiO2$B9=B$BN$N7A@.(B | plasma | 4/30 15:55:37 |
| 825 | PLD$BK!$K$h$k(BBi-Te$B7OG.EEAG;RGvKl$N:n@=$HI>2A(B -3- | PLD Bi-Te Thermoelectric | 4/30 18:37:25 |
| 837 | MOVPE$B$K$*$1$k;@2=%"%k%_%K%&%`$K$h$k(BGaAs(001)$BLL$N(Bin situ $B%Q%C%7%Y!<%7%g%s(B | in situ passivation GaAs MOVPE | 4/30 18:54:23 |
| 847 | $B%^%/%m%-%c%S%F%#K!$rMQ$$$?(BCu-SCFD$B$N2r@O$HNL;:BP1~AuCV$N35G0@_7W(B | supercritical copper deposition | 4/30 19:11:28 |
| 851 | $BGr6b%J%NN3;R$NC4;}$H8w?(G^3h@-(B | pulsed laser deposition Pt nanoparticle photocatalyst | 4/30 19:17:22 |
| 860 | InGaAsP$B7O(BMOVPE$B$K$*$1$kH?1~O'7A>u0MB8@-(B | MOVPE Simulation | 4/30 19:21:47 |
| 888 | $BA*Br@.D9(BInGaN$BNL;R0f8M$K$*$1$k5$Aj3H;6$N8z2L(B | InGaN Selective Area Growth MOVPE | 4/30 19:51:01 |
| 908 | $BD6NW3&Fs;@2=C:AG$rMQ$$$?;@2=%A%?%s$N:n@=>r7o(B | supercritical fluid deposition Titanium oxide | 4/30 20:13:42 |
| 909 | ULSI$B6KGv(BCu$BKl$N(BSCFD$B@=Kl>r7o2<$G$N6E=85sF0$H@)8f(B | supercritical carbon dioxide ultra-thin Cu film | 4/30 20:13:48 |
| 977 | MOVPE$BA*Br@.D9$K$*$1$k(BInN$B@.D9B.EYJ,I[$N2r@O(B | MOVPE selective area growth InN | 4/30 21:43:01 |
| 1021 | $BD6NW3&N.BNCf$G$N(BZnO$BGvKl$NBO@Q(B | $BD6NW3&N.BN(B ZnO | 5/2 10:36:59 |
(C) 2008 ($B
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